HM62W16255HCLTT-10 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W16255HCLTT-10

4M High Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM62W16255HC Series

4M High Speed SRAM (256-kword × 16-bit)

ADE-203-1200 (Z)

Preliminary

Rev. 0.0

Sep. 1, 2000

Description

The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed, high density memory and

wide bit width configuration, such as cache and buffer memory in system. The HM62W16255HC is

packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

Features

• Single 3.3 V supply: 3.3 V ± 0.3 V

• Access time: 10 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current: 145 mA (max)

• TTL standby current: 40 mA (max)

• CMOS standby current: 5 mA (max)

: 1 mA (max) (L-version)

• Data retention current: 0.6 mA (max) (L-version)

• Data retention voltage: 2.0 V (min) (L-version)

• Center VCC and VSS type pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your nearest

Hitachi’s Sales Dept. regarding specification.

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