HM62W16255HCJP-10 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W16255HCJP-10

4M High Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM62W16255HC Series

Low VCC Data Retention Characteristics (Ta = 0 to +70°C)

This characteristics is guaranteed only for L-version.

Parameter

VCC for data retention

Data retention current

Symbol Min Typ*1 Max Unit

VDR

2.0 — — V

I CCDR

— TBD 600 µA

Chip deselect to data retention time tCDR

0

— — ns

Operation recovery time

tR

5

— — ms

Note: 1. Typical values are at VCC = 3.0 V, Ta = +25˚C, and not guaranteed.

Test conditions

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

VCC = 3 V

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

See retention waveform

Low VCC Data Retention Timing Waveform

t CDR

Data retention mode

tR

VCC

3.0 V

VDR

2.0 V

CS

0V

VCC ≥ CS ≥ VCC – 0.2 V

15

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