HM624100H Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM624100H

4M High Speed SRAM (1-Mword × 4-bit)

Hitachi -> Renesas Electronics 

HM624100H Series

4M High Speed SRAM (1-Mword × 4-bit)

ADE-203-789D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed

access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed and high density

memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ

for high density surface mounting.

Features

• Single 5.0 V supply : 5.0 V ± 10 %

• Access time 10/12/15 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current : 200/180/160 mA (max)

• TTL standby current : 70/60/50 mA (max)

• CMOS standby ccurrent : 5 mA (max)

: 1.2 mA (max) (L-version)

• Data retension current : 0.8 mA (max) (L-version)

• Data retension voltage : 2.0 V (min) (L-version)

• Center VCC and VSS type pinout

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