IRFM210 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFM210 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100 Bottom : 5.0 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = 10V
GS
4
V = 20V
GS
2
※ Note : TJ = 25℃
0
0
2
4
6
8
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
400
300
C
iss
C
oss
200
C
rss
※ Notes :
100
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10
VDS = 100V
V = 160V
DS
8
6
4
2
※ Note : ID = 3.3 A
0
0
2
4
6
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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