IRFSL4610 Просмотр технического описания (PDF) - International Rectifier
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IRFSL4610 Datasheet PDF : 11 Pages
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IRF/B/S/SL4610
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.085 ––– V/°C Reference to 25°C, ID = 1mAc
RDS(on)
Static Drain-to-Source On-Resistance
––– 11 14 mΩ VGS = 10V, ID = 44A f
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
RG
Gate Input Resistance
––– 1.5 ––– Ω f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
73 ––– –––
Qg
Total Gate Charge
––– 90 140
Qgs
Gate-to-Source Charge
––– 20 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 36 –––
td(on)
Turn-On Delay Time
––– 18 –––
tr
Rise Time
––– 87 –––
td(off)
Turn-Off Delay Time
––– 53 –––
tf
Fall Time
––– 70 –––
Ciss
Input Capacitance
––– 3550 –––
Coss
Output Capacitance
––– 260 –––
Crss
Reverse Transfer Capacitance
––– 150 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 330 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 380 –––
S VDS = 50V, ID = 44A
nC ID = 44A
VDS = 80V
VGS = 10V f
ns VDD = 65V
ID = 44A
RG = 5.6Ω
VGS = 10V f
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V h, See Fig.11
VGS = 0V, VDS = 0V to 80V g, See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 73 A MOSFET symbol
D
––– ––– 290
showing the
integral reverse
G
S
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 44A, VGS = 0V f
––– 35 53 ns TJ = 25°C
VR = 85V,
––– 42 63
TJ = 125°C
––– 44 66 nC TJ = 25°C
IF = 44A
di/dt = 100A/µs f
––– 65 98
TJ = 125°C
––– 2.1 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.39mH
RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
2
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