IRF820APBF(2011) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRF820APBF
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRF820A, SiHF820A

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

RG

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

A

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

10 V

QGS

VG

QG

QGD

Charge

Fig. 12d - Basic Gate Charge Waveform

700

650

300

ID

Top 1.1 A

250

1.6 A

Bottom 2.5 A

200

150

100

50

0

25

50

75

100

125

150

91057_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

600

550

0.0

0.5

1.0

1.5

2.0

2.5

91057_12d

IAV, Avalanche Current (A)

Fig. 13a - Typical Drain-to-Source Voltage vs.

Avalanche Current

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91057

S11-0507-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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