IRF820APBF(2011) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRF820APBF
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

3.0

2.5

2.0

1.5

1.0

0.5

0.0

25

91054_09

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF820A, SiHF820A

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

10

D = 0.50

1

0.20

0.10

0.05

0.1 0.02

0.01

10-2

10-5

91057_11

Single Pulse

(Thermal Response)

10-4

10-3

10-2

t1, Rectangular Pulse Duration (s)

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

0.1

1

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91057

S11-0507-Rev. B, 21-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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