IRF820APBF(2011) Просмотр технического описания (PDF) - Vishay Semiconductors
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IRF820APBF Datasheet PDF : 9 Pages
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IRF820A, SiHF820A
Vishay Siliconix
104
103
102
10
1
1
91057_05
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
102
103
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
91057_07
VGS = 0 V
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 2.5 A
VDS = 400 V
15
VDS = 250 V
VDS = 100 V
10
5
0
0
91057_06
For test circuit
see figure 13
4
8
12
16
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
by RDS(on)
10
10 µs
100 µs
1
1 ms
TC = 25 °C
TJ = 150 °C
0.1 Single Pulse
10 ms
10
102
103
104
91057_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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