IRF9520 Просмотр технического описания (PDF) - Intersil

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IRF9520

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

Intersil 

IRF9520

Typical Performance Curves Unless Otherwise Specified (Continued)

10µs

10

100µs

1ms

1

OPERATION IN THIS AREA

IS LIMITED BY rDS(ON)

10ms

100ms

DC

TC = 25oC

TJ = MAX RATED

0.1

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

-10

VGS = -10V

VGS = -9V

-8

VGS = -8V

-6

VGS = -7V

PULSE DURATION = 80µs

-4

DUTY CYCLE = 0.5% MAX.

VGS = -6V

-2

VGS = -5V

VGS = -4V

0

0

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

-5

VGS = -8V

-4

VGS = -9V

VGS = -10V

-3

VGS = -6V

VGS = -7V

-2

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

VGS = -5V

-1

VGS = -4V

0

0

-1

-2

-3

-4

-5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

-10

VDS ≥ I D(ON) x rDS(ON) MAX

PULSE DURATION = 80µs

-8 DUTY CYCLE = 0.5% MAX.

TJ = 125oC

-6

TJ = 25oC

TJ = -55oC

-4

-2

0

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

2.0

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

1.6

1.2

VGS = -10V

0.8

0.4

VGS = -20V

0

0

-5

-10

-15

-20

-25

ID, DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

2.2

VGS = -10V, ID = -4A

PULSE DURATION = 80µs

1.8 DUTY CYCLE = 0.5% MAX.

1.4

1.0

0.6

0.2

-40

0

40

80

120

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4-6

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