SIHF740 Просмотр технического описания (PDF) - Vishay Semiconductors

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SIHF740

Power MOSFET

Vishay Semiconductors 

IRF740, SiHF740

Vishay Siliconix

2500

2000

1500

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

500

0

100

91054_05

Coss

Crss

101

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

150 °C

101

25 °C

100

10-1

0.50

91054_07

0.70

0.90

1.10

VGS = 0 V

1.30

1.50

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 10 A

16

VDS = 320 V

VDS = 200 V

12

VDS = 80 V

8

4

0

0

91054_06

For test circuit

see figure 13

15

30

45

60

75

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage

103

5

2

102

5

2

10

5

2

1

5

2

0.1

2

0.1

Operation in this area limited

by RDS(on)

5

2

1

TC = 25 °C

TJ = 150 °C

Single Pulse

5

2

10

5 102 2

10 µs

100 µs

1 ms

10 ms

5 103

91054_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91054

S11-0507-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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