IRF740A(2008) Просмотр технического описания (PDF) - Vishay Semiconductors

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IRF740A
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRF740A, SiHF740A

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

10

TJ = 150° C

1

0.1

4.5V

0.01

0.1

20μs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

1

TJ = 25° C

V DS= 50V

20μs PULSE WIDTH

0.1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS , Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1

4.5V

0.1

0.1

20µs PULSE WIDTH

TJ= 150 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

3.0 ID = 10A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91051

S-81291-Rev. A, 16-Jun-08

www.vishay.com

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