IRF7402PbF
1200
1000
800
600
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
400
Crss
200
0
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I D = 3.8A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
4
8
12
16
20
24
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150°C
TJ = 25°C
1
0.1
0.4
VGS = 0V A
0.8
1.2
1.6
2.0
2.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
100us
10
1ms
TC = 25°C
TJ = 150°C
10ms
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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