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IRF7413Z

HEXFET® Power MOSFET

International Rectifier 

IRF7413Z

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

Drain-to-Source Breakdown Voltage 30 ––– –––

Breakdown Voltage Temp. Coefficient ––– 0.025 –––

Static Drain-to-Source On-Resistance ––– 8.0 10

––– 10.5 13

V

V/°C

mΩ

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

e VGS = 10V, ID = 13A

e VGS = 4.5V, ID = 10A

VGS(th)

∆VGS(th)/∆TJ

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

1.35 1.80 2.25 V VDS = VGS, ID = 250µA

––– -5.0 ––– mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

62 ––– –––

S VDS = 15V, ID = 10A

Qg

Total Gate Charge

––– 9.5 14

Qgs1

Pre-Vth Gate-to-Source Charge

––– 3.0 –––

VDS = 15V

Qgs2

Post-Vth Gate-to-Source Charge

––– 1.0 ––– nC VGS = 4.5V

Qgd

Gate-to-Drain Charge

––– 3.0 –––

ID = 10A

Qgodr

Gate Charge Overdrive

––– 2.5 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 4.0 –––

Qoss

Output Charge

RG

Gate Resistance

––– 5.6 –––

––– 2.3 4.5

nC VDS = 15V, VGS = 0V

Ω

td(on)

Turn-On Delay Time

––– 8.7 –––

VDD = 16V, VGS = 4.5V

tr

Rise Time

––– 6.3 –––

ID = 10A

td(off)

Turn-Off Delay Time

––– 11 ––– ns Clamped Inductive Load

tf

Fall Time

––– 3.8 –––

Ciss

Input Capacitance

––– 1210 –––

VGS = 0V

Coss

Output Capacitance

––– 270 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 140 –––

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

™ Avalanche Current

Typ.

–––

–––

Max.

32

10

Units

mJ

A

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 3.1

MOSFET symbol

(Body Diode)

A showing the

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 100

––– ––– 1.0

––– 24 36

––– 16 24

integral reverse

p-n junction diode.

e V TJ = 25°C, IS = 10A, VGS = 0V

ns TJ = 25°C, IF = 10A, VDD = 15V

e nC di/dt = 100A/µs

ton

Forward Turn-On Time

2

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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