IRF7410 Просмотр технического описания (PDF) - International Rectifier

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IRF7410

HEXFET® Power MOSFET

International Rectifier 

IRF7410

100

VGS

TOP

-7.0V

-5.0V

-4.5V

-2.5V

-1.8V

10

-1.5V

-1.2V

BOTTOM -1.0V

1

-1.0V

0.1

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP

-7.0V

-5.0V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

BOTTOM -1.0V

10

-1.0V

1

0.1

20µs PULSE WIDTH

Tj = 150°C

1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 150 °C

10

 TJ = 25 °C

 V DS= -10V

20µs PULSE WIDTH

1

1.0

1.2

1.4

1.6

1.8

2.0

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0  ID = -16A

1.5

1.0

0.5

 VGS = -4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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