IRF7402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.024 –––
–––
0.035
–––
0.050
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.1A
VGS = 2.7V, ID = 3.5A
0.70 ––– ––– V VDS = VGS, ID = 250µA
6.1 ––– ––– S VDS = 10V, ID = 1.9A
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = -12V
––– 14 22
ID = 3.8A
––– 2.0 3.0
––– 6.3 9.5
nC VDS = 16V
VGS = 4.5V, See Fig. 6 and 12
––– 5.1 –––
VDD = 10V
––– 47 ––– ns ID = 3.8A
––– 24 –––
RG = 6.2Ω
––– 32 –––
RD = 2.6Ω
––– 650 –––
VGS = 0V
––– 300 ––– pF VDS = 15V
––– 150 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 2.5
––– ––– 54
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
D
G
S
––– ––– 1.2 V TJ = 25°C, IS = 3.8A, VGS = 0V
––– 51 77 ns TJ = 25°C, IF = 3.8A
––– 69 100 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601
2
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