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IDT7M1014S30GB

4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE

Integrated Device Technology 

IDT7M1014 4K x 36 BiCMOS

DUAL-PORT STATIC RAM MODULE

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = –55°C to +125°C or 0°C to +70°C)

7M1014SxxG

-15

-20

Symbol Parameter

Read Cycle

Min. Max. Min. Max.

7M1014SxxGB

-25

-30

Min. Max. Min. Max. Unit

tRC

Read Cycle Time

15

—

20

—

25

—

tAA

Address Access Time

—

15

—

20

—

25

tOE

Output Enable Access Time

—

8

—

10

—

12

tOH

Output Hold from Address Change

3

—

3

—

3

—

tOLZ(1) Output Enable to Output in Low-Z

0

—

0

—

0

—

tOHZ(1) Output Disable to Output in Hi-Z

—

7

—

9

—

11

Write Cycle

tWC

Write Cycle Time

15

—

20

—

25

—

tAW

Address Valid to End of Write

14

—

15

—

20

—

tAS

Address Set-Up Time

0

—

0

—

0

—

tWP

Write Pulse Width

12

—

15

—

20

—

tWR

Write Recovery Time

1

—

2

—

2

—

tDW

Data Valid to End of Write

10

—

12

—

15

—

tDH

Data Hold Time

0

—

0

—

0

—

tWHZ(1) Write Enable to Output in Hi-Z

—

7

—

9

—

11

tOW(1)

Output Active from End of Write

0

—

0

—

0

—

tWDD

Write Pulse to Data Delay

—

30

—

40

—

45

tDDD(1) Write Data Valid to Read Data Delay

—

25

—

30

—

35

NOTES:

1. This parameter is guaranteed by design but not tested.

2. Port-to-Port delay through the RAM cells from the writing port to the reading port.

30

—

ns

—

30

ns

—

15

ns

3

—

ns

0

—

ns

—

13

ns

30

—

ns

25

—

ns

0

—

ns

25

—

ns

2

—

ns

20

—

ns

0

—

ns

—

13

ns

0

—

ns

—

50

ns

—

40

ns

2819 tbl 09

TIMING WAVEFORM OF READ CYCLE NO. 1 (EITHER SIDE) (1,2)

ADDRESS

DATAOUT

tRC

tAA

tOH

NOTES:

1. R/W is HIGH for Read Cycles.

2. OE ≤ VIL.

7.03

tOH

2819 drw 05

5

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