IDT7M1014S25GB Просмотр технического описания (PDF) - Integrated Device Technology
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IDT7M1014S25GB Datasheet PDF : 8 Pages
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IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = –55°C to +125°C or 0°C to +70°C)
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Input Leakage
VIN = GND to VCC
Output Leakage
OE ≥ VIH, VOUT = GND to VCC
Output LOW Voltage
Output HIGH Voltage
Test Conditions
VCC = Max.
VCC = Max.
VCC = Min. IOL = 4mA
VCC = Min. IOH = -4mA
Min.
—
—
—
2.4
Max.
40
10
0.4
—
Unit
µA
µA
V
V
2819 ttbl 06
DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = –55°C to +125°C or 0°C to +70°C)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
ICC
Operating Current
VCC = Max.,
Outputs Open, f = fMAX(1)
—
1040
mA
NOTE:
2819 tbl 07
1. At f=fMAX, address and data inputs (except OE) are cycling at the maximum frequency of read cycle of 1/tRC, and using “AC TEST CONDITIONS” of
input levels of GND to 3V.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1-3
+5 V
2819 tbl 08
DATAOUT
255Ω
480 Ω
5 pF*
*Including scope and jig.
2819 drw 03
Figure 1. Output Load
(For tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW)
DATA OUT
Zo = 50Ω
50Ω
8
7
6
∆TAA
(Typical, ns) 5
4
3
2
1
20 40 60 80 100 120 140 160 180 200
CAPACITANCE (pF)
2819 drw 04b
Figure 3. Alternate Lumped Capacitive Load,
Typical Derating
1.5V
2819 drw 04a
Figure 2. Alternate Output Load
7.03
4
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