IRF6691 Просмотр технического описания (PDF) - International Rectifier
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IRF6691 Datasheet PDF : 10 Pages
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IRF6691
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
6.0
ID= 17A
5.0
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
TJ = 25°C
10
1
0.0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
TA = 25°C
Tj = 150°C
Single Pulse
1
0
1
10msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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