CXA3092N Просмотр технического описания (PDF) - Sony Semiconductor
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CXA3092N Datasheet PDF : 18 Pages
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CXA3092N
Unless otherwise specified, VCC=5 V, Ta=25 °C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head
inductance) =1 µH, RH (Head DC resistance value) =30 Ω
Refer to Fig. 2 to Fig. 4
No.
Item
Symbol
Measurement conditions
Min. Typ. Max. Unit
Head differential
14
voltage amplitude
Differential voltage between HX pin and HY pin
VSW
5.8 6.8
at switching of Write current (open Head)
Vp-p
TRW is the time required for Write current to turn
Mode switching time
15-1
TRW to 90 % after Pin 19 changes from “High” to
Read to Write
“Low”.
0.2 0.4 µs
TWR1 is the time required for the Read amplifier
TWR1 output∗ to turn to 90 % after Pin 19 changes
0.3 0.5 µs
Mode switching time
15-2
Write to Read
from “Low” to “High”.
TWR2 is the time required for Write current to
TWR2 decreases to 10 % after Pin 19 changes from
0.2 0.4 µs
“Low” to “High”.
TIR is the time required for the Read amplifier
Mode switching time
16
TIR
output∗ to turn to 90 % after Pin 20 changes
to Read
from “High” to “Low”.
1 µs
TSA1 is the time required for Pin 11 to turn
Mode switching time
17-1
TSA1 “High” after the last transition of Write data
safe to unsafe
when Write data is stopped in Write mode.
1.5 3 5 µs
TSA2 is the time required for Pin 11 to turn “Low”
Mode switching time
17-2 unsafe to safe
TSA2
after the first transition of Write data in Write
mode.
0.6 µs
TH is the time required for the Read amplifier
18 Head switching time TH output∗ to reach 90 % when the selected head
switched in Read mode.
0.6 µs
Write current
TPD is the time required for Write current to
19 propagation delay
TPD reach 90 % after the Write data falling edge.
2 7 ns
time
LH=0 µH, RH=0 Ω
Write current
20
rise/fall time
TR/TF
TR is the time required for Write current to reach
90 % from 10 %; TF is the same time required
to reach 10 % from 90 %. LH=0 µH, RH=0 Ω
1 3 ns
∗Read amplifier output 100 mVp-p 10 MHz
—9—
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