IN74HCT241A Просмотр технического описания (PDF) - IK Semicon Co., Ltd

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IN74HCT241A

Octal 3-State Noninverting Buffer/Line Driver/Line Receiver High-Performance Silicon-Gate CMOS

IK Semicon Co., Ltd 

IN74HCT241A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Symbol

Parameter

Test Conditions

VIH

Minimum High- VOUT= VCC-0.1 V

Level Input

⎢IOUT⎢≤ 20 µA

Voltage

VIL

Maximum Low - VOUT= 0.1 V

Level Input

⎢IOUT⎢ ≤ 20 µA

Voltage

VOH Minimum High- VIN= VIH

Level Output

⎢IOUT⎢ ≤ 20 µA

Voltage

VIN= VIH

⎢IOUT⎢ ≤ 6.0 mA

VOL Maximum Low- VIN = VIL

Level Output

⎢IOUT⎢ ≤ 20 µA

Voltage

VIN= VIL

⎢IOUT⎢ ≤ 6.0 mA

IIN

Maximum Input VIN=VCC or GND

Leakage Current

IOZ Maximum three Output in High-Impedance State

State Leakage

VIN = VIL or VIH

Current

VOUT=VCC or GND

ICC

Maximum

VIN=VCC or GND

Quiescent Supply IOUT=0µA

Current

(per Package)

∆ICC Additional

Quiescent

VIN = 2.4 V, Any One Input

VIN=VCC or GND, Other Inputs

Supply Current IOUT=0µA

NOTE: Total Supply Current = ICC + ∑∆ICC

VCC Guaranteed Limit

V 25 °C ≤85 ≤125 Unit

to °C °C

-55°C

4.5 2.0 2.0 2.0

V

5.5 2.0 2.0 2.0

4.5 0.8 0.8 0.8

V

5.5 0.8 0.8 0.8

4.5 4.4 4.4 4.4

V

5.5 5.4 5.4 5.4

4.5 3.98 3.84 3.7

4.5 0.1 0.1 0.1

V

5.5 0.1 0.1 0.1

4.5 0.26 0.33 0.4

5.5 ±0.1 ±1.0 ±1.0 µA

5.5 ±0.5 ±5.0 ±10.0 µA

5.5 4.0 40 160 µA

≥-55°C 25°C to mA

125°C

5.5

2.9

2.4

Rev. 00

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