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IN74HC30A

8-Input NAND Gate

Integral Corp. 

IN74HC30A

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

VCC DC Supply Voltage (Referenced to GND)

-0.5 to +7.0

V

VIN DC Input Voltage (Referenced to GND)

-1.5 to VCC +1.5

V

VOUT DC Output Voltage (Referenced to GND)

-0.5 to VCC +0.5

V

IIN

DC Input Current, per Pin

±20

mA

IOUT DC Output Current, per Pin

±25

mA

ICC DC Supply Current, VCC and GND Pins

±50

mA

PD Power Dissipation in Still Air, Plastic DIP**

SOIC Package**

750

mW

500

Tstg Storage Temperature

-65 to +150

°C

TL Lead Temperature, 1 mm from Case for 10 Seconds

260

°C

(Plastic DIP or SOIC Package)

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

**Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C

SOIC Package: : - 7 mW/°C from 65° to 125°C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

VCC

VIN, VOUT

TA

DC Supply Voltage (Referenced to GND)

DC Input Voltage, Output Voltage (Referenced to GND)

Operating Temperature, All Package Types

tr, tf

Input Rise and Fall Time (Figure 1)

VCC =2.0 V

VCC =4.5 V

VCC =6.0 V

Min Max Unit

2.0 6.0

V

0

VCC

V

-55 +125 °C

0 1000 ns

0

500

0

400

This device contains protection circuitry to guard against damage due to high static voltages or electric fields.

However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this

high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or

VOUT)≤VCC.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused

outputs must be left open.

2

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