IN74HCT20 Просмотр технического описания (PDF) - Integral Corp.

Номер в каталоге

Компоненты Описание

Список матч

IN74HCT20

DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HCT20

AC ELECTRICAL CHARACTERISTICS(VCC =5.0 V ±10%,CL=50pF,Input tr=tf=6.0 ns)

Guaranteed Limit

Symbol

Parameter

25 °C ≤85°C ≤125° Unit

to

C

-55°C

tPLH, Maximum Propagation Delay, Input A 28

35

42 ns

tPHL ,B,C or D to Output Y (Figures 1 and 2)

tTLH, tTHL Maximum Output Transition Time, Any 15

19

22 ns

Output (Figures 1 and 2)

CIN Maximum Input Capacitance

10

10

10 pF

Power Dissipation Capacitance (Per Typical @25°C,VCC=5.0

Gate)

V

CPD Used to determine the no-load dynamic

29

pF

power

consumption:

PD=CPDVCC2f+ICCVCC

Figure 1. Switching Waveforms

Figure 2. Test Circuit

EXPANDED LOGIC DIAGRAM

(1/2 of the Device)

4

Share Link: