IKW15N120T2(2013) Просмотр технического описания (PDF) - Infineon Technologies

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IKW15N120T2
(Rev.:2013)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

0.63

K/W

1.12

40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Symbol

Conditions

V(BR)CES VGE=0V, IC=500µA

VCE(sat) VGE = 15V, IC=15A

Tj=25C

Tj=150C

Tj=175C

VF

VGE=0V, IF=15A

Tj=25C

Tj=150C

Tj=175C

VGE(th)

ICES

IC=0.6mA,VCE=VGE

VCE=1200V,

VGE=0V

Tj=25C

Tj=150C

Tj=175C

IGES

gfs

VCE=0V,VGE=20V

VCE=20V, IC=15A

min.

1200

-

-

-

-

-

-

5.2

-

-

-

-

-

Value

typ.

-

1.7

2.1

2.2

1.75

1.8

1.75

5.8

-

-

-

-

8

Unit

max.

-V

2.2

-

-

2.2

-

-

6.4

mA

0.4

4.0

20

600 nA

-S

IFAG IPC TD VLS

2

Rev. 2.2 12.06.2013

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