IKB03N120H2 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

IKB03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKP03N120H2,

IKW03N120H2

IKB03N120H2

12A

Ic

10A

8A

T =80°C

C

6A

T =110°C

C

4A

2A

Ic

0A

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 800V,

VGE = +15V/0V, RG = 82Ω)

10A

1A

0,1A

tp= 1 µs

5 µs

1 0 µs

5 0 µs

1 0 0 µs

5 0 0 µs

DC

0,01 A 1 V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

60W

50W

40W

30W

20W

10W

0W

25°C

50°C

75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(Tj ≤ 150°C)

12A

10A

8A

6A

4A

2A

0A

25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors

5

Rev. 2, Mar-04

Share Link: