IKB03N120H2 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

IKB03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKP03N120H2,

IKW03N120H2

IKB03N120H2

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure A. Definition of switching times

Figure B. Definition of switching losses

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

½ Lσ

öö

DUT

(Diode)

L

Cσ

Cr

VDC

RG

DUT

(IGBT)

½ Lσ

Figure E. Dynamic test circuit

Leakage inductance Lσ = 180nH,

Stray capacitor Cσ = 40pF,

Relief capacitor Cr = 4nF (only for

ZVT switching)

Power Semiconductors

14

Rev. 2, Mar-04

Share Link: