IKA08N65F5 Просмотр технического описания (PDF) - Infineon Technologies
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IKA08N65F5
Infineon Technologies
IKA08N65F5 Datasheet PDF : 17 Pages
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IKA08N65F5
Highspeedswitchingseriesfifthgeneration
0.200
Eoff
Eon
0.175
Ets
0.200
Eoff
Eon
0.175
Ets
0.150
0.150
0.125
0.125
0.100
0.100
0.075
0.075
0.050
0.050
0.025
0.025
0.000
5
15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=4A,Dynamictestcircuitin
Figure E)
0.000
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=4A,rG=48Ω,DynamictestcircuitinFigure
E)
0.200
0.175
16
130V
520V
14
0.150
Eoff
Eon
12
Ets
0.125
10
0.100
8
0.075
6
0.050
4
0.025
2
0.000
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0.0
5.0
10.0
15.0
20.0
25.0
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
functionofcollectoremittervoltage
(IC=8A)
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=4A,rG=48Ω,DynamictestcircuitinFigure
E)
11
Rev.2.1,2015-05-05
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