IKA03N120H2(2013) Просмотр технического описания (PDF) - Infineon Technologies

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IKA03N120H2
(Rev.:2013)

HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKA03N120H2

Switching Energy ZVT, Inductive Load

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-off energy

Eoff

VCC=800V, IC=3A,

VGE=0V/15V,

RG=82, Cr2)=4nF

Tj=25C

Tj=150C

min.

-

-

Value

typ.

0.05

0.09

Unit

max.

mJ

-

-

Power Semiconductors

4

Rev. 2.3 17.07.2013

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