G01H1202 Просмотр технического описания (PDF) - Infineon Technologies

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G01H1202

HighSpeed 2-Technology

Infineon Technologies 

IGP01N120H2,

IGD01N120H2

IGB01N120H2

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure A. Definition of switching times

Figure B. Definition of switching losses

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

½ Lσ

öö

DUT

(Diode)

L

Cσ

Cr

VDC

RG

DUT

(IGBT)

½ Lσ

Figure E. Dynamic test circuit

Leakage inductance Lσ = 180nH,

Stray capacitor Cσ = 40pF,

Relief capacitor Cr = 1nF (only for

ZVT switching)

Power Semiconductors

12

Rev. 2, Mar-04

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