TrenchStop® Series
IGP50N60T
IGW50N60T
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
12
Rev. 2.6 Nov. 09