IGP30N60T Просмотр технического описания (PDF) - Infineon Technologies

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IGP30N60T

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

TrenchStop Series

IGP30N60T

IGW30N60T

D=0.5

0.2

10-1K/W 0.1

0.05

0.02

R,(K/W)

0.29566

0.25779

0.19382

0.05279

R1

τ, (s)

6.478*10-2

6.12*10-3

4.679*10-4

6.45*10-5

R2

10-2K/W

0.01

C1=τ1/R1 C2=τ2/R2

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

9

Rev. 2.2 Dec-04

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