SDM10K45-7-F Просмотр технического описания (PDF) - Diodes Incorporated.
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SDM10K45-7-F Datasheet PDF : 4 Pages
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Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Typical Thermal Resistance, Junction to Ambient (Note 5)
Typical Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
RJC
TJ, TSTG
Value
200
500
270
-40 to +150
SDM10K45
Unit
mW
C/W
C/W
C
Electrical Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic
Symbol Min
Reverse Breakdown Voltage (Note 6)
V(BR)R
45
Forward Voltage
VF
Reverse Leakage Current (Note 6)
IR
Total Capacitance
CT
Notes: 5. Device mounted on 1*MRP FR-4 PC board, 2oz.
6. Short duration pulse test used to minimize self-heating effect.
Typ
370
0.07
6.0
Max
450
1.0
Unit
Test Condition
V IR = 100A
mV IF = 10mA
A VR = 10V
pF VR = 10V, f = 1.0MHz
100
80
60
40
20
TJ = 150°C
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
100
)A 100
m
NT(
TA = 125ºC
E
R
R
U
TA = 75ºC
C
D
R
10
WA
R
O
F
S
U
O
E
1.0
N
NTA
NTSA
,I
I
F
0.1
0
200
TA = 25ºC
TA = -25ºC
400
600
800
1.0
VF , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
TJ = 25°C
f = 1MHz
10
10
1.0
0.1
0.01
0
10
20
30
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
1.0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
SDM10K45
Document number: DS30256 Rev.17 - 2
2 of 4
www.diodes.com
October 2019
© Diodes Incorporated
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