F45N06LE Просмотр технического описания (PDF) - Intersil
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F45N06LE Datasheet PDF : 8 Pages
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RFP45N06LE, RF1S45N06LESM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP45N06LE, RF1S45N06LESM UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
60
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
45
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Refer to Peak Current Curve
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
142
0.95
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 13)
VGS = VDS, ID = 250µA (Figure 12)
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = ±10V
ID = 45A, VGS = 5V (Figure 11)
VDD = 30V, ID = 45A, RL = 0.67Ω,
VGS = 5V, RGS = 2.5Ω
(Figures 10, 18, 19)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 45A,
RL = 1.07Ω
(Figures 20, 21)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
TO-220, and TO-263
MIN
TYP
60
-
1
-
-
-
-
-
-
-
-
-
-
-
-
20
-
150
-
55
-
90
-
-
-
107
-
58
-
2.4
-
2150
-
640
-
240
-
-
-
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
VSD
trr
ISD = 45A
ISD = 45A, dISD/dt = 100A/µs
-
-
-
-
2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
-
3
1
250
10
0.028
215
-
-
-
-
185
135
75
3.0
-
-
-
1.05
80
UNITS
V
V
µA
µA
µA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
MAX
1.5
155
UNITS
V
ns
2
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