IDT71024 Просмотр технического описания (PDF) - Integrated Device Technology
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IDT71024 Datasheet PDF : 8 Pages
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IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)
Symbol Parameter
71024S12(1)
Min. Max.
71024S15
71024S17(3) 71024S20 71024S25(2)
Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle
tRC
Read Cycle Time
12 —
15 —
17
— 20 — 25 —
ns
tAA
Address Access Time
— 12
— 15
—
17 — 20 — 25
ns
tACS
tCLZ(4)
tCHZ(4)
Chip Select Access Time
Chip Select to Output in Low-Z
Chip Deselect to Output in High-Z
— 12
3
—
0
6
— 15
—
17 — 20 — 25
ns
3—
3
— 3 —3 —
ns
0
7
0
80
8 0 10
ns
tOE
Output Enable to Output Valid
—6
tOLZ(4) Output Enable to Output in Low-Z
0
—
tOHZ(4) Output Disable to Output in High-Z
0
5
—7
—
8—
8 — 10
ns
0—
0
— 0 —0 —
ns
0
5
0
60
7 0 10
ns
tOH
Output Hold from Address Change 4
—
tPU(4)
Chip Select to Power-Up Time
0
—
tPD(4) Chip Deselect to Power-Down Time — 12
4—
4
— 4 —4 —
ns
0—
0
— 0 —0 —
ns
— 15
—
17 — 20 — 25
ns
Write Cycle
tWC
Write Cycle Time
12 —
15 —
17
— 20 — 25 —
ns
tAW
Address Valid to End-of-Write
10 —
12 —
13
— 15 — 15 —
ns
tCW
Chip Select to End-of-Write
10 —
12 —
13
— 15 — 15 —
ns
tAS
Address Set-up Time
0
—
0—
0
— 0 —0 —
ns
tWP
Write Pulse Width
10 —
12 —
13
— 15 — 15 —
ns
tWR
Write Recovery Time
0
—
0—
0
— 0 —0 —
ns
tDW
Data Valid to End-of-Write
7
—
8—
9
— 9 — 10 —
ns
tDH
Data Hold Time
0
—
0—
0
—0
tOW(4) Output Active from End-of-Write
3
—
3—
3
—4
tWHZ(4) Write Enable to Output in High-Z
0
5
0
5
0
70
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. 0°C to +70°C and –55°C to +125°C temperature ranges only.
4. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
—0
—4
80
—
ns
—
ns
9
ns
2964 tbl 010
5
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