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IDT71024S70Y

CMOS STATIC RAM 1 MEG (128K x 8-BIT)

Integrated Device Technology 

IDT71024S70

CMOS STATIC RAM 1MEG (128K x 8-BIT)

DC ELECTRICAL CHARACTERISTICS(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)

Symbol

Parameter

ICC Dynamic Operating Current, CS2 ≥ VIH and

CS2 ≥ VIH and CS1 ≤ VIL, Outputs Open,

VCC = Max., f = fMAX(2)

ISB Standby Power Supply Current (TTL Level)

CS1 ≥ VIH or CS2 ≤ VIL, Outputs Open,

VCC = Max., f = fMAX(2)

ISB1 Full Standby Power Supply Current

(CMOS Level) CS1 ≥ VHC,

or CS2 ≤ VLC Outputs Open,

VCC = Max., f = 0(2), VIN ≤ VLC or VIN ≥ VHC

NOTES:

1.All values are maximum guaranteed values.

2.fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.

COMMERCIAL TEMPERATURE RANGE

71024S70

Com'l. Mil. Unit

140 — mA

35 — mA

10 — mA

3568 tbl 06

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

GND to 3.0V

3ns

1.5V

1.5V

See Figures 1 and 2

3568 tbl 07

DATAOUT

30pF

5V

480Ω

255Ω

3568 drw 03

Figure 1. AC Test Load

DATAOUT

5pF*

5V

480Ω

255Ω

3568 drw 04

*Including jig and scope capacitance.

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)

3

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