75229P Просмотр технического описания (PDF) - Intersil
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75229P Datasheet PDF : 8 Pages
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HUF75229P3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
50
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
50
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
44
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 5
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Figure 6, 14, 15
Power Dissipation . . .
Derate Above 25oC
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.PD
...
90
W
0.6
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
SYMBOL
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 45V, VGS = 0V
VDS = 40V, VGS = 0V, TC = 150oC
VGS = ±20V
ID = 44A, VGS = 10V (Figure 9)
VDD = 30V, ID ≅ 44A,
RL = 0.68Ω, VGS = 10V,
RGS = 9.1Ω
(Figures 18, 19)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID ≅ 44A,
RL = 0.68Ω
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
MIN
50
2
-
-
-
0.017
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
0.020
-
12
58
33
33
-
60
35
2.0
MAX
-
4
1
250
±100
0.022
105
-
-
-
-
100
75
43
2.5
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
Source to Drain Diode Specifications
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
(Figure 3)
TO-220
-
1060
-
pF
-
405
-
pF
-
95
-
pF
-
-
1.66
oC/W
-
-
62
oC/W
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
TEST CONDITIONS
VSD
trr
QRR
ISD = 44A
ISD = 44A, dISD/dt = 100A/µs
ISD = 44A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
-
-
1.25
V
-
-
72
ns
-
-
120
nC
2
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