HY57V161610E Просмотр технического описания (PDF) - Hynix Semiconductor

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HY57V161610E

2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor 

CAPACITANCE (TA=25°C, f=1MHz)

Parameter

Pin

Symbol

Min

Input capacitance

CLK

CI1

2.5

A0 ~ A10, BA

CI2

2.5

CKE, CS, RAS, CAS, WE, UDQM, LDQM

Data input / output capacitance DQ0 ~ DQ15

CI/O

4

OUTPUT LOAD CIRCUIT

HY57V161610E

Max

Unit

4

pF

5

pF

6.5

pF

Output

Vtt=1.4V

RT=250 Ω

30pF

Output

30pF

DC Output Load Circuit

AC Output Load Circuit

DC CHARACTERISTICS I (TA=0°C to 70°C)

Parameter

Symbol

Min.

Max

Unit

Power Supply Voltage

VDD

3.0

3.6

V

Input leakage current

IL

-1

1

uA

Output leakage current

IO

-1

1

uA

Output high voltage

VOH

2.4

-

V

Output low voltage

VOL

-

0.4

V

Note :

1.VDD(min) is 3.15V when HY57V161610ET-7 operates at CAS latency=2 and tCK2=8.9ns.

2.VDD(min) of HY57V161610ET-5/55 is 3.15V

3.VIN = 0 to 3.6V, All other pins are not under test = 0V

4.DOUT is disabled, VOUT=0 to 3.6V

Note

1, 2

3

4

IOH = -4mA

IOL =+4mA

Rev. 0.2 / Aug. 2003

5

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