HUR60100PT Просмотр технического описания (PDF) - Sirectifier Electronics
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HUR60100PT
Sirectifier Electronics
HUR60100PT Datasheet PDF : 3 Pages
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HUR60100PT, HUR60120PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
60
IF 50
TVJ=150°C
40 TVJ=100°C
TVJ= 25°C
30
20
10
0
0
1
2
3 V4
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
5
C
4
Qr
TVJ= 100°C
VR = 600V
3
IF= 60A
IF= 30A
2
IF= 15A
1
60
A
50
IRM
40
30
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
20
10
0
100
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -di /dt
F
220
ns
200
trr
180
160
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
140
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -di /dt
F
120
V
VFR
tfr
80
TVJ= 100°C
IF = 30A
VFR
1.2
us
tfr
0.8
40
0.4
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus T
VJ
2
1
K/W
ZthJC
0.1
120
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t
0
0.0
0 200 400 600 A80/u0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus di /dt
F
Constants for ZthJC calculation ..A:
i
Rthi (K/W)
ti (s)
1
0.465
2
0.179
3
0.256
0.0052
0.0003
0.0397
Constants for Z calculation ..AR:
thJC
i
R (K/W) t (s)
thi
i
1
0.368
0.0052
2
0.1417
0.0003
3
0.0295
0.0004
4
0.5604
0.0092
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