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PJ2N3906CT

PNP Epitaxial Silicon Transistor

Promax Johnton 

GENERAL PURPO SE TRANSISTO R

• Collector-Emitter Voltage: VCEO = 40V

• Collector Dissipation: PC (max) = 625 mW

PJ2N3906

PNP Epitaxial Silicon Transistor

.

TO-92

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

T stg

Value

40

40

5

200

625

150

-55~150

Unit

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta = 25℃)

P in : 1. Emitter

2. Base

3. Collector

P in : 1. Base

2. Emitter

3. Collector

ORDERING INFORMATION

Device

PJ2N3906CT

PJ2N3906CX

Operating Temperature

-20℃～+85℃

Package

T O-92

SOT -23

C h aracte ri s ti c

S y m bo l

Te st Conditions

Collector-Base Breakdown Voltage

*Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Curent

Base Cut-off Current

*DC Current Gain

BVCBO

BVCEO

BVEBO

ICEX

IBL

hFE

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Produce

Turn On Time

T urn Off T ime

VCE(sat)

VBE(sat)

Cob

fT

ton

toff

*Pulse Test: Pulse Width ≤ 300μs.Duty Cycle ≤ 2%

IC= 10μA , IE=0

IC= 1mA , IB=0

IE=10μA , IC=0

VCE= 30V , VBE = 3V

VCE= 30V , VBE = 3V

Ic =0.1mA, VCE =1V

Ic =1mA, VCE =1V

Ic=10mA; VCE =1V

Ic =50 mA, VCE =1V

Ic =100 mA, VCE =1V

IC= 10 mA , IB=1mA

IC= 50mA , IB=5mA

IC= 10 mA , IB=1mA

IC= 50mA , IB=5mA

VCB =5V, IE =0

f=1MHz

Ic =10 mA, VCE =20V

f=100MHz

Vcc =3 V, VBE =0.5V

Ic =10 mA, IB1 =1mA

Vcc =3V, Ic =1mA

IB1=IB2=1 mA

Min Typ Max Uni

t

40

V

40

V

6

V

50

nA

50

nA

60

80

100

300

60

30

0.25

V

0.4

V

0.65

0.85

V

0.95

V

4.5 pF

250

MHz

70

ns

250

ns

1-3

2002/01.rev.A

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