HSM122 Просмотр технического описания (PDF) - Renesas Electronics

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HSM122

Silicon Epitaxial Planar Diode for High Voltage Switching

Renesas Electronics 

HSM122

Absolute Maximum Ratings

Item

Symbol

Value

Peak reverse voltage

VRM

420

Reverse voltage

VR

400

Peak forward current

IFM

625

Non-Repetitive peak forward surge current IFSM *1

1

Average rectified current

IO

150

Power dissipation

Pd *2

150

Junction temperature

Tj

125

Storage temperature

Tstg

−55 to +125

Notes: 1. Value at duration of 1s.

2. Standard substrate mounting (20mm × 15mm × 0.8t mm, With Polyimide board)

(Ta = 25°C)

Unit

V

V

mA

A

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Forward voltage

VF

Reverse current

IR

Capacitance

C

Reverse recovery time trr

—

—

1.2

V

IF = 100 mA

—

—

1.0

µA VR = 400 V

—

—

10

pF VR = 0 V, f = 1 MHz

—

—

20

µs IF = 30 mA, VR = 10 V, RL = 2 kΩ

Rev.1.00 Oct 27, 2005 page 2 of 4

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