5962F9563101QEC Просмотр технического описания (PDF) - Intersil
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5962F9563101QEC Datasheet PDF : 3 Pages
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Die Characteristics
DIE DIMENSIONS:
84 mils x 130 mils
(2140µm x 3290µm)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 10kÅ ±1kÅ
Top Metallization:
M1: Mo/Tiw
Thickness: 5800Å
M2: Al/Si/Cu
Thickness: 10kÅ ±1kÅ
Substrate:
AVLSI1RA
Metallization Mask Layout
HS-26CT32RH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
VDD (When Powered Up)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105A/cm2
Transistor Count:
240
Bond Pad Size:
110µm x 100µm
HS-26CT32RH
AIN
VDD
BIN
(1)
(16)
(15)
AIN (2)
(14) BIN
AOUT (3)
ENAB (4)
COUT (5)
CIN (6)
(13) BOUT
(12) ENAB
(11) DOUT
(10) DIN
(7)
(8)
(9)
CIN
GND
DIN
3
FN2930.4
August 7, 2008
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