HN58V1001 Просмотр технического описания (PDF) - Renesas Electronics

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HN58V1001

1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function

Renesas Electronics 

HN58V1001 Series

Operation Table

Operation

CE

OE

WE

RES

Read

Standby

VIL

VIL

VIH

VH*1

VIH

×*2

×

×

Write

VIL

VIH

VIL

VH

Deselect

VIL

VIH

VIH

VH

Write Inhibit

×

×

VIH

×

×

VIL

×

×

Data Polling

VIL

VIL

VIH

VH

Program reset

×

×

×

VIL

Notes: 1. Refer to the recommended DC operating conditions.

2. × : Don’t care

RDY/Busy

High-Z

High-Z

High-Z to VOL

High-Z





VOL

High-Z

I/O

Dout

High-Z

Din

High-Z





Dout (I/O7)

High-Z

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range*2

VCC

−0.6 to +7.0

V

Vin

−0.5*1 to +7.0

V

Topr

0 to +70

°C

Storage temperature range

Tstg

–55 to +125

°C

Notes: 1. Vin min = −3.0 V for pulse width ≤ 50 ns

2. Including electrical characteristics and data retention

Recommended DC Operating Conditions

Parameter

Symbol

Supply voltage

Input voltage

Operating temperature

VCC

VSS

VIL

VIH

VH

Topr

Notes: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns

2. VIH (min): 2.2 V for VCC = 3.6 to 5.5 V

Min

Typ

2.7

3.0

0

0

−0.3*1



1.9*2



VCC − 0.5 

0



Max

5.5

0

0.8

VCC + 0.3

VCC + 1.0

+70

Unit

V

V

V

V

V

°C

Rev.8.00, Nov. 28. 2003, page 4 of 21

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