HN58C1001 Просмотр технического описания (PDF) - Renesas Electronics
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HN58C1001 Datasheet PDF : 24 Pages
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HN58C1001 Series
Write Cycle
Parameter
Symbol Min*2 Typ Max Unit Test conditions
Address setup time
tAS
0
ns
Address hold time
tAH
150
ns
CE to write setup time (WE controlled)
tCS
0
ns
CE hold time (WE controlled)
tCH
0
ns
WE to write setup time (CE controlled)
tWS
0
ns
WE hold time (CE controlled)
tWH
0
ns
OE to write setup time
tOES
0
ns
OE hold time
tOEH
0
ns
Data setup time
tDS
100
ns
Data hold time
tDH
10
ns
WE pulse width (WE controlled)
tWP
250
ns
CE pulse width (CE controlled)
tCW
250
ns
Data latch time
tDL
300
ns
Byte load cycle
tBLC
0.55
30
µs
Byte load window
Write cycle time
tBL
100
µs
tWC
—
10*3 ms
Time to device busy
Write start time
tDB
120
ns
tDW
150*4
ns
Reset protect time
Reset high time*5
tRP
100
µs
tRES
1
µs
Notes: 1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and are
no longer driven.
2. Use this device in longer cycle than this value.
3. tWC must be longer than this value unless polling techniques or RDY/Busy are used. This device
automatically completes the internal write operation within this value.
4. Next read or write operation can be initiated after tDW if polling techniques or RDY/Busy are used.
5. This parameter is sampled and not 100% tested.
6. A7 to A16 are page addresses and must be same within the page write operation.
7. See AC read characteristics.
Rev.8.00, Nov. 27.2003, page 7 of 21
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