HN58V66AI Просмотр технического описания (PDF) - Renesas Electronics

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HN58V66AI

64k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

Renesas Electronics 

HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series

Operation Table

Operation

CE

OE

WE

RES*3

Read

Standby

VIL

VIL

VIH

VH*1

VIH

×*2

×

×

Write

VIL

VIH

VIL

VH

Deselect

VIL

VIH

VIH

VH

Write Inhibit

×

×

VIH

×

×

VIL

×

×

Data Polling

VIL

VIL

VIH

VH

Program reset

×

×

×

VIL

Notes: 1. Refer to the recommended DC operating conditions.

2. × : Don’t care

3. This function supported by only the HN58V66A series.

RDY/Busy

High-Z

High-Z

High-Z to VOL

High-Z





VOL

High-Z

I/O

Dout

High-Z

Din

High-Z





Dout (I/O7)

High-Z

Absolute Maximum Ratings

Parameter

Symbol Value

Unit

Power supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range *2

HN58V65AI/HN58V66AI

VCC

Vin

Topr

–0.6 to +7.0 V

–0.5*1 to

V

+7.0*3

–40 to +85 °C

HN58V65A-SR/HN58V66A-SR Topr

–20 to +85

°C

Storage temperature range

Tstg

Notes: 1. Vin min : –3.0 V for pulse width ≤ 50 ns.

2. Including electrical characteristics and data retention.

3. Should not exceed VCC + 1 V.

–55 to +125 °C

Rev.3.00, Feb.02.2004, page 5 of 26

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