HN1D03FU Просмотр технического описания (PDF) - Toshiba
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HN1D03FU Datasheet PDF : 5 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03FU
Ultra High Speed Switching Application
HN1D03FU
Unit: mm
z Built in anode common and cathode common.
Unit 1
z Low forward voltage
Q1, Q2: VF (3) = 0.90V (typ.)
z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
z Small total capacitance Q1, Q2: CT = 0.9pF (typ.)
Unit 2
z Low forward voltage
Q3, Q4: VF (3) = 0.92V (typ.)
z Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.)
z Small total capacitance Q3, Q4: CT = 2.2pF (typ.)
Unit 1, Unit 2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
85
V
80
V
300*
mA
100*
mA
2*
A
200
mW
125
°C
−55 to 125
°C
JEDEC
―
JEITA
―
TOSHIBA
1-2T1D
Weight: 6.2mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and
Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.
Marking
Pin Assignment (Top View)
Start of commercial production
1992-05
1
2014-03-01
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