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HN1D02F(2007) Просмотр технического описания (PDF) - Toshiba

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HN1D02F Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D02F
Ultra-High-Speed Switching Applications
HN1D02F
Unit: mm
z The HN1D02F is composed of two (2) cathode common units.
z Low forward voltage
: VF (3) = 0.90 V (typ.)
z Fast reverse recovery time : trr = 1.6 ns (typ.)
z Small total capacitance : CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10 ms)
IFSM
2 (*)
A
Power dissipation
P
300
mW
Junction temperature
Storage temperature
Tj
125
°C
JEDEC
JEITA
Tstg
55~125
°C
TOSHIBA
1-3K1B
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.015 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are
used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single
diode.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1 MHz
IF =10 mA (Fig. 1)
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
0.1
μA
0.5
0.9 3.0 pF
1.6 4.0
ns
1
2007-11-01

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