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HMD1M32M2G-6

4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design

Hanbit Electronics Co.,Ltd 

HANBit

ICC7

II(L)

IO(L)

Standby Current /RAS = VIH

/CAS = VIL

DOUT = Enable

Input Leakage Current

Any Input (0V<=VIN<=7V)

All Other Pins Not Under Test = 0V

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<=7V)

HMD1M32M2G

-

10

mA

1

-10

10

uA

-10

10

uA

Note: 1.Icc depends on output load condition when the device is selected.

Icc (max) is specified at the output open condition.

2. Address can be changed once or less while /RAS = VIL.

3. Address can be changed once or less while /CAS = VIH

CAPACITANCE

o

( TA=25 C, Vcc = 5V+/- 10%, f = 1Mhz )

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

Input Capacitance (A0-A9)

CI1

-

35

pF

Input Capacitance (/WE)

C I2

-

34

pF

Input Capacitance (/RAS0,/RAS2)

CI3

-

27

pF

Input Capacitance (/CAS0-/CAS3)

CI4

-

27

pF

Input/Output Capacitance (DQ0-31)

CDQ1

-

20

pF

Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

2. /CAS = VIH to disable DOUT.

NOTE

1

1,2

1,2

1,2

1,2

AC CHARACTERISTICS

(

0

o

C

≤

TA

≤

70oC

,

Vcc

=

5V±10%,

See

notes

1,15.)

The GMM731000CNS/SG writes data only in early write cycle (twcs>=twcs(min))

Delayed write cycle is not available because of I/O common.

READ, WRITE AND REFRESH CYCLE (Common Parameters)

SYMBOL

PARAMETER

tRC

tPR

tRAS

tCAS

tASR

tRAH

tASC

Random Read or Write Cycle Time

/RAS Precharge Time

/RAS Pulse Width

/CAS Pulse Width

Row Address Setup Time

Row Address Hold Time

Column Address Setup Time

-6

MIN

MAX

110

-

40

-

60

10K

15

10K

0

-

10

-

0

-

-7

MIN

MAX

130

-

50

-

70

10K

18

10K

0

-

10

-

0

-

UNIT NOTE

ns

ns

ns

ns

ns

ns

ns

URL:www.hbe.co.kr

REV.1.0 (August.2002)

4

HANBiT Electronics Co., Ltd

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