HMC341LC3B(V02) Просмотр технического описания (PDF) - Hittite Microwave

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HMC341LC3B
(Rev.:V02)

SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz

Hittite Microwave 

v02.1208

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 5.43 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

+5.5 Vdc

+5 dBm

175 °C

0.489 W

184 °C/W

-65 to +150 °C

-40 to +85 °C

HMC341LC3B

SMT GaAs PHEMT MMIC

LOW NOISE AMPLIFIER, 21 - 29 GHz

8

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

+2.7

34

+3.0

35

+4.0

38

+5.0

41

Note: Amplifier will operate over full voltage ranges shown above.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA.

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.

7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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