HMC154S8E Просмотр технического описания (PDF) - Hittite Microwave
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HMC154S8E Datasheet PDF : 6 Pages
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v02.0805
Typical Applications
The HMC154S8 / HMC154S8E is ideal for:
• MMDS & WirelessLAN
• Basestation Infrastructure
• Portable Wireless
Functional Diagram
14
HMC154S8 / 154S8E
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Features
High Third Order Intercept: +60 dBm
Single Positive Supply: +3 to +10V
High RF Power Capability
TTL/CMOS Control
General Description
The HMC154S8 & HMC154S8E are low-cost SPDT
switches in 8-lead SOIC packages for use in transmit-
receive applications which require very low distortion
at high signal power levels. The device can control
signals from DC to 2.5 GHz and is especially suited for
900 MHz and 1.8 - 2.2 GHz applications. The design
provides exceptional intermodulation performance;
providing a +60dBm third order intercept at 8 Volt bias.
RF1 and RF2 are reflective shorts when “Off”. On-chip
circuitry allows single positive supply operation at very
low DC current with control inputs compatible with
CMOS and most TTL logic families.
14 - 2
Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min. Typ. Max.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.5 0.7
0.7 0.9
1.0 1.3
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
22
25
19
22
15
18
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
20
30
14
18
10
13
Input Power for 1 dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
35
39
34
38
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
55
60
54
60
Switching Characteristics
tRISE, tFALL (10/90% RF)
DC - 2.5 GHz
10
tON, tOFF (50% CTL to 10/90% RF)
24
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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