HM5117400B Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM5117400B

4,194,304-word 4-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM5117400B Series

Read-Modify-Write Cycle

Parameter

Read-modify-write cycle time

to delay time

to delay time

Column address to delay time

hold time from

HM5117400B

-6

-7

Symbol Min Max Min

tRWC

155 —

181

tRWD

85 —

98

tCWD

40 —

46

tAWD

55 —

63

tOEH

15 —

18

Max

—

—

—

—

—

-8

Min Max

205 —

110 —

50 —

70 —

20 —

Unit Notes

ns

ns 14

ns 14

ns 14

ns

Refresh Cycle

HM5117400B

-6

-7

Parameter

Symbol Min Max Min

setup time (CBR refresh cycle) tCSR

5

—

5

hold time (CBR refresh cycle) tCHR

10 —

10

setup time (CBR refresh cycle) tWRP

0

—

0

hold time (CBR refresh cycle) tWRH

10 —

10

precharge to

hold time tRPC

0

—

0

Max

—

—

—

—

—

-8

Min Max

5

—

10 —

0

—

10 —

0

—

Unit Notes

ns

ns

ns

ns

ns

Fast Page Mode Cycle

HM5117400B

-6

-7

Parameter

Symbol Min

Fast page mode cycle time

tPC

40

Fast page mode

pulse width tRASP

—

Access time from

precharge tCPA

—

hold time from

precharge tCPRH

35

Max Min

—

45

100000 —

35

—

—

40

-8

Max Min

—

50

100000 —

40

—

—

45

Max Unit Notes

—

ns

100000 ns 16

45

ns 9, 17, 20

—

ns

9

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