HM5116400 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM5116400

4,194,304-word 4-bit Dynamic RAM

Hitachi -> Renesas Electronics 

HM5116400 Series, HM5117400 Series

DC Characteristics

(Ta = 0 to +70˚C, VCC = 5 V 10%, VSS = 0 V) (HM5117400 Series)

HM5117400

-5

-6

-7

Parameter

Operating current*1, *2

Standby current

Symbol

I CC1

I CC2

Min Max Min Max Min Max Unit

— 100 — 90 — 80 mA

— 2 — 2 — 2 mA

— 1 — 1 — 1 mA

Standby current

ICC2

(L-version)

-only refresh current*2 ICC3

Standby current*1

I CC5

— 150 — 150 — 150 A

— 100 — 90 — 80 mA

— 5 — 5 — 5 mA

Test conditions

tRC = min

TTL interface

,

= VIH

Dout = High-Z

CMOS interface

,

VCC – 0.2 V

Dout = High-Z

CMOS interface

,

VCC – 0.2 V

Dout = High-Z

tRC = min

= VIH

= VIL

Dout = enable

-before-

refresh

ICC6

current

— 100 — 90 — 80 mA

tRC = min

Fast page mode current*1, *3 ICC7

Battery backup current

ICC10

(Standby with CBR refresh)

(L-version)

Input leakage current

I LI

Output leakage current

I LO

— 90 — 80 — 70 mA

— 350 — 350 — 350 A

–10 10 –10 10 –10 10 A

–10 10 –10 10 –10 10 A

tPC = min

CMOS interface

Dout = High-Z, CBR

refresh: tRC = 62.5 s

tRAS 0.3 s

0 V Vin 7 V

0 V Vin 7 V

Dout = disable

Output high voltage

VOH

2.4 VCC 2.4 VCC 2.4 VCC V

High Iout = –5 mA

Output low voltage

VOL

0 0.4 0 0.4 0 0.4 V

Low Iout = 4.2 mA

Notes : 1. ICC depends on output load condition when the device is selected. ICC max is specified at the

output open condition.

2. Address can be changed once or less while

3. Address can be changed once or less while

= VIL.

= VIH.

9

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